Method of producing a layer system and a layer system as...

Details Method of producing a layer system and a layer system as... Method of producing a layer system and a layer system as...

C - Chemistry, Metallurgy

30

B

C30B 33/02 (2006.01) B32B 7/02 (2006.01) C30B 23/02 (2006.01) C30B 25/02 (2006.01) C30B 25/18 (2006.01) C30B 33/00 (2006.01) H01L 21/10 (2006.01)

Patent

CA 2066847

18532 ABSTRACT OF THE DISCLOSURE An epitaxial growth of a first component of a multilayer stack for use in optical, electro-optical and electronic or magnetic components, e.g. on a silicon wafer, can be formed by depositing a second component in a form in which that second component produces a precipitate or inclusions in the first component which with contin- ued deposition may be partly replaced by a third component so that the precipitate itself is buried in a monocrystalline structure and, after a thermal treatment in which the precipitate coalesces, a buried layer is formed of the second component or a compound thereof with, say, the first component, in that monocrystalline structure.

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