Method of producing a metal-semiconductor field-effect...

Details Method of producing a metal-semiconductor field-effect... Method of producing a metal-semiconductor field-effect...

H - Electricity

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H01L 29/04 (2006.01) H01L 21/033 (2006.01) H01L 21/26 (2006.01) H01L 21/32 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1124408

Abstract A metal-semiconductor field-effect transistor is formed by pro- viding a blanket layer of the same conductivity type as the semiconductor body, with field oxide subsequently being grown, and with a region of opposite conductivity type being formed to extend partially under the field oxide, the initial blanket layer acting as the field implant region of the field-effect transistor.

341114

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