Method of producing a photoelectric conversion layer

Details Method of producing a photoelectric conversion layer Method of producing a photoelectric conversion layer

H - Electricity

01

L

204/96.14, 148/3

H01L 29/16 (2006.01) H01L 31/08 (2006.01)

Patent

CA 1187384

Abstract of the Disclosure A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200°C, in a plasma atmosphere. The plasma is then stopped and the layer is heated in a temperature range of 200°C - 400°C without intermediate cooling. In this way the saturation field for photocurrent of electrons or holes can be made lower than heretofor. When using electrons as the major carriers, the heat-treating temperature is set preferably in the temperature range of 200°C - 240°C, and when using holes as the major carriers, it is preferably set in the range of 270°C - 400°C.

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