H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/00 (2006.01) H01S 5/12 (2006.01) H01S 5/125 (2006.01) H01S 5/20 (2006.01) H01S 5/10 (2006.01)
Patent
CA 2419233
A semiconductor laser to be produced by a method of the present invention includes a semiconductor substrate, a diffraction grating with an irregular surface formed on the semiconductor substrate, and an optical guide layer grown on the diffraction grating. A period of time over which the optical guide layer grows is selected such that the guide layer does not fill up the valleys of the diffraction grating. Also, the period of time remains substantially constant without regard to the variation of height of the diffraction grating.
Nec Compound Semiconductor Devices Ltd.
Smart & Biggar
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