C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.08, 204/1
C23C 14/34 (2006.01) C23C 14/35 (2006.01) C23C 14/56 (2006.01) H01J 37/34 (2006.01)
Patent
CA 1325792
METHOD OF PRODUCING A THIN FILM BY SPUTTERING AND AN OPPOSED TARGET TYPE SPUTTERING APPARATUS ABSTRACT OF THE DISCLOSURE A method and apparatus for producing a thin film, such as a magnetic thin film and a metallic thin film on a substrate, such as plastic film, by the employment of a pair of opposed targets spaced apart from one another in a vacuum sputtering gas atmosphere, and magnetic field generating units for generating the perpendicular magnetic field extending perpendicularly to the surface of the targets for confining plasma in the space, and a reflecting electrode arranged adjacent to and in front of the magnetic field generating units and around the periphery of the targets for reflecting electrons toward the space between the opposed targets. The magnetic field generating units being arranged around the outer periphery of each of the opposed targets, and capable of generating an auxiliary magnetic field for capturing the electrons. The combination of the reflecting of the electrons and the auxiliary magnetic field promotes a uniform erosion of the entire surfaces of the targets and enables a control of the thickness of the deposited film on a substrate having a large width.
555436
Honjyo Kazuhiko
Kadokura Sadao
Kusuhara Akio
Mcfadden Fincham
Teijin Limited
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