Method of producing a thin silicon-on-insulator layer

Details Method of producing a thin silicon-on-insulator layer Method of producing a thin silicon-on-insulator layer

H - Electricity

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356/176

H01L 21/306 (2006.01) H01L 21/20 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1218762

ABSTRACT A method of forming a thin silicon layer upon which semiconductor devices may be constructed. An epitaxial layer is grown on a silicon substrate, and oxygen or nitrogen ions are implanted into the epitaxial layer in order to form a buried etch-stop layer therein. An oxide layer is grown on the epitaxial layer, and is used to form a bond to a mechanical support wafer. The silicon substrate is removed using grinding and/or HNA, the upper portions of the epitaxy are removed using EDP, EPP or KOH, and the etch-stop is removed using a non-selective etch. The remaining portions of the epitaxy forms the thin silicon layer. Due to the uniformity of the implanted ions, the thin silicon layer has a very uniform thickness. BU9-84-031

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