G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 1/78 (2012.01) G03F 1/22 (2012.01) H01L 21/308 (2006.01) G03F 7/004 (2006.01)
Patent
CA 2377081
The present invention relates to a method of producing a structure of etch-resistant polymer on a substrate. A layer of sterol capable of polymerizing to form this structure is first deposited on a face of the substrate. Then, a first region of the layer of sterol is exposed to an electron beam to locally polymerize this layer and form the structure of etch-resistant polymer. A second region of the layer of sterol that has not been exposed to the electron beam is removed to leave on the face of the substrate only the structure of etch-resistant polymer. Finally, a region of the face of the substrate not covered by the structure of etch-resistant polymer can be etched away, and the structure of etch-resistant polymer removed following this etching.
Beauvais Jacques
Cloutier Melanie
Drouin Dominique
Lavallee Eric
Bkp Gp
Quantiscript Inc.
Socpra Sciences Et Genie S.e.c.
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