C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96
C23C 16/44 (2006.01) C23C 14/00 (2006.01) C30B 33/00 (2006.01)
Patent
CA 1209949
- 1 - METHOD OF PRODUCING ARTICLES BY VAPOR DEPOSITION OF MULTICONSTITUENT MATERIAL Abstract This invention is concerned with a method for producing articles comprising a multiconstituent material overlying a substrate, especially useful for production of integrated electrical or electronic devices. The method includes the low temperature deposition multiconstituent material on a substrate using at least two ballistic par- ticle streams that are caused to intersect in a volume of space proximate to the substrate. One particle stream, the "gas" stream, comprises excited neutral particles, and the other particle stream, the "metal" stream, consists substantially of a particle species capable of chemically reacting with the excited neutrals. The excited neutrals are typically produced in an RF-generated plasma or by means of photon excitation, the source of the metal stream is typically an evaporator or a Knudsen cell. Charged particles can be removed from the gas stream by means of magnetic and/or electric fields, and their removal typi- cally advantageously affects the electrical properties of the deposits. The method had broad applicability, and can be used, for instance, to deposit high quality stoi- chiometric oxide or nitride films on silicon, germanium, III-V or II-VI semiconductors, metals, or insulators, as well as to deposit doped or layered multiconstituent films. Because deposition can take place at very low substrate temperatures, generally between about 30°C and 250°C, a patterned deposit can be produced by deposition onto a resist-masked substrate, followed by, removal of the resist by, e.g., lift-off.
435235
Kirby Eades Gale Baker
Western Electric Company Incorporated
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