Method of producing bipolar transistor

Details Method of producing bipolar transistor Method of producing bipolar transistor

H - Electricity

01

L

356/182

H01L 21/331 (2006.01) H01L 21/225 (2006.01)

Patent

CA 2031253

ABSTRACT OF THE DISCLOSURE A method of producing a bipolar transistor comprised of collector, base and emitter regions disposed sequentially on a semiconductor substrate. A semiconductor layer is deposited on the collector region. The semiconductor layer is cleaned to expose an active surface. An impurity source gas is applied to the exposed active surface while heating the substrate to form an impurity adsorption layer. The impurity is diffused into the semiconductor layer to form the base region. Another semiconductor layer is deposited on the base region. This semiconductor layer is cleaned to expose an active surface. Another impurity source gas is applied to the exposed active surface while heating the substrate to form another impurity adsorption layer. This impurity is diffused into the semiconductor layer to form the emitter region.

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