Method of producing cvd silicon oxynitride film

Details Method of producing cvd silicon oxynitride film Method of producing cvd silicon oxynitride film

C - Chemistry, Metallurgy

30

B

C30B 28/14 (2006.01) C23C 16/30 (2006.01) H01L 21/314 (2006.01)

Patent

CA 2053419

Method of Producing CVD Silicon Oxynitride Film Abstract of the Disclosure A silicon oxynitride film to be used as an passivation film in a semiconductor device is formed by the chemical vapour deposition of a mixture of a nitrogen containing organic silane gas such as (CH3)3SiNHSi(CH3)3, (CH3)3SiN(cC2H5)2, (CH3)3SiNHCOCH3, (CH3)2SiN(CH3)2 and CH2=CH-(CH3)2SiN(CH3)2 and the ozone gas. A semiconductor wafer is placed in a reaction vessel and is heated at a temperature not higher than 450°C. The mixture of the nitrogen containing organic silane gas the ozone gas is introduced into the reaction vessel and the reaction is carried out to form a silicon oxynitride film having the desired composition at a high deposition rate. Since the poisonous mono-silane gas is not utilized, the process can be carried out safely. Further, the reaction is performed at a low temperature not higher than 450°C, the aluminum wiring conductors are not damaged during the chemical vapour deposition. The reaction vessel may be kept at the atmospheric pressure or a pressure higher than the atmospheric pressure. Further, the plasma CVD may be carried out. - 16 -

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