Method of producing defectless epitaxial layer of gallium...

Details Method of producing defectless epitaxial layer of gallium... Method of producing defectless epitaxial layer of gallium...

C - Chemistry, Metallurgy

30

B

148/3.4

C30B 25/00 (2006.01) C30B 33/00 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1041878

Abstract of the Disclosure A nitrogen-doped n-type epitaxial layer of GaP grown from a vapor phase is heated at a temperature ranging from 740°C to 1000°C for a selected period of time depending on the temperature. The heat treatment is carried out in H2, N2 or Ar in the presence of Ga and P vapors. Alternatively, a protection coating of SiO2, Si3N4 or Al2O3 is formed on the epitaxial layer prior to the heat treatment. - 1 -

211718

Affiliated with

Also associated with

Rating

Method of producing defectless epitaxial layer of gallium... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing defectless epitaxial layer of gallium..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing defectless epitaxial layer of gallium... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-869972