Method of producing grain oriented silicon iron plate of low...

Details Method of producing grain oriented silicon iron plate of low... Method of producing grain oriented silicon iron plate of low...

C - Chemistry, Metallurgy

21

D

148/8

C21D 8/12 (2006.01)

Patent

CA 1314461

ABSTRACT OF THE DISCLOSURE With respect to a grain oriented silicon iron plate contain- ing Si of more than 1.0 wt% to less than 4.0 wt% and having a (110)<001> aggregate structure, by passing through the steps of removing oxidized films from the surface thereof, heating to temperatures of 1000 to 1250°C, siliconizing by contacting to an atmospheric gas bearing SiC14 of 5 to 40 vol%, subjecting to diffusion uniformalization annealing in a protecting atmospheric gas at temperatures of 1000 to 1400°C and coating, after cooling, an isolation film thereon, the invention produces such a grain oriented silicon iron plate containing the Si content of 4.0 to 7.0 wt%.

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