C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
261/6
C04B 35/14 (2006.01) C04B 35/56 (2006.01) C04B 35/565 (2006.01) C04B 35/575 (2006.01)
Patent
CA 1096408
ABSTRACT Disclosure is made of a high-density, high-strength silicon carbide ceramic material that is produced using a silicon carbide powder containing boron or boron-containing compound as a densification additive by the utili- zation of boron in the sintering atmosphere.
289873
Coppola John A.
Smoak Richard H.
Fetherstonhaugh & Co.
The Carborundum Company
LandOfFree
Method of producing hign density silicon carbide product does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing hign density silicon carbide product, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing hign density silicon carbide product will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1007729