Method of producing homogeneously doped semiconductor...

C - Chemistry – Metallurgy – 30 – B

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148/2.8

C30B 31/00 (2006.01)

Patent

CA 1072422

ABSTRACT A process for the production of substantially homogeneously doped p-conductive semiconductor material is described, which comprises subjecting the semiconductor material to be doped to irradiation with .gamma.-photons wherein the semiconductor material is germanium and wherein gallium atoms are pro- duced as doping atoms on irradiation of the germanium with .gamma.-photons.

320601

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Method of producing homogeneously doped semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing homogeneously doped semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing homogeneously doped semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-443344

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.