Method of producing homogeneously doped semiconductor...

Details Method of producing homogeneously doped semiconductor... Method of producing homogeneously doped semiconductor...

C - Chemistry, Metallurgy

30

B

148/2.8

C30B 31/00 (2006.01)

Patent

CA 1072422

ABSTRACT A process for the production of substantially homogeneously doped p-conductive semiconductor material is described, which comprises subjecting the semiconductor material to be doped to irradiation with .gamma.-photons wherein the semiconductor material is germanium and wherein gallium atoms are pro- duced as doping atoms on irradiation of the germanium with .gamma.-photons.

320601

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