Method of producing homogeneously doped semiconductor...

Details Method of producing homogeneously doped semiconductor... Method of producing homogeneously doped semiconductor...

C - Chemistry, Metallurgy

30

B

148/2.8

C30B 1/00 (2006.01) C30B 31/20 (2006.01) G21H 5/00 (2006.01) H01L 21/261 (2006.01)

Patent

CA 1068583

Abstract A process for the production of substantially homogeneously doped p-conductive semiconductor material is described, which comprises subjecting the semiconductor material to be doped to irradiation with .gamma.-photons wherein the semiconductor material is silicon and wherein aluminum atoms are produced as doping atoms on irradiation of the silicon with .gamma.-photons.

233055

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