C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/3
C30B 23/02 (2006.01) C30B 25/02 (2006.01) C30B 29/10 (2006.01) C30B 31/06 (2006.01) H01L 21/20 (2006.01)
Patent
CA 1250209
ABSTRACT A method of producing II-V compound semiconduc- tors with greatly reduced intrinsic defect levels comprises the step of causing atoms, radicals, or ions of at least one member selected from the group consist- ing of hydrogen and the halogens to be injected into and diffused through II-V compound semiconductors during or after the production thereof.
476104
Bkp Gp
Shinanokenshi Co. Ltd.
Suda Toshikazu
LandOfFree
Method of producing ii-v compound semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing ii-v compound semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing ii-v compound semiconductors will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1320620