Method of producing ii-v compound semiconductors

C - Chemistry – Metallurgy – 30 – B

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C30B 23/02 (2006.01) C30B 25/02 (2006.01) C30B 29/10 (2006.01) C30B 31/06 (2006.01) H01L 21/20 (2006.01)

Patent

CA 1250209

ABSTRACT A method of producing II-V compound semiconduc- tors with greatly reduced intrinsic defect levels comprises the step of causing atoms, radicals, or ions of at least one member selected from the group consist- ing of hydrogen and the halogens to be injected into and diffused through II-V compound semiconductors during or after the production thereof.

476104

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