Method of producing mis transistor having gate electrode of...

Details Method of producing mis transistor having gate electrode of... Method of producing mis transistor having gate electrode of...

H - Electricity

01

L

356/149

H01L 21/336 (2006.01) H01L 21/225 (2006.01) H01L 21/3215 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2031417

ABSTRACT OF THE DISCLOSURE A method of producing an MIS transistor wherein a substrate is prepared with a gate electrode and a semiconductor layer which defines a source region and a drain region. A natural oxide film is removed from a surface of the gate electrode and from a surface of the semiconductor layer to expose an active surface. A source gas containing an impurity component is applied to the exposed active surface to deposit thereon an impurity adsorption film. The substrate is annealed to diffuse the impurity component from the impurity adsorption film into the gate electrode and concurrently into the semiconductor layer to form the source and drain regions. The gate electrode has the same conductivity type as that of the source and drain regions.

Affiliated with

Also associated with

Rating

Method of producing mis transistor having gate electrode of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing mis transistor having gate electrode of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing mis transistor having gate electrode of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1826035