Method of producing n-doped silicon crystals having a...

Details Method of producing n-doped silicon crystals having a... Method of producing n-doped silicon crystals having a...

C - Chemistry, Metallurgy

30

B

356/41, 148/2.8

C30B 31/00 (2006.01) C30B 31/20 (2006.01)

Patent

CA 1082574

ABSTRACT OF THE DISCLOSURE A method is described for producing an n-doped silicon crystal having a radial resistivity profile of a form such that the resistivity of the crystal is uniform over a radially central portion and increases radially outwardly over a peripheral portion. The starting material may be an n-type or p-type silicon monocrystal which is subjected to controlled neutron irradiation such that the radially central portion of the crystal is more heavily bombarded with neutrons than the edge portion. The neutron irradiation produces phosphorus atoms which dope the central portion to a greater degree than the edge portion to produce the desired resistivity pattern.

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