Method of producing phosphorus-doped silicon monocrystals

Details Method of producing phosphorus-doped silicon monocrystals Method of producing phosphorus-doped silicon monocrystals

C - Chemistry, Metallurgy

30

B

148/3

C30B 31/06 (2006.01) C30B 13/06 (2006.01)

Patent

CA 1085703

ABSTRACT OF THE DISCLOSURE A process is described for the production of phosphorus-doped silicon monocrystals with a peripheral depletion of the dopant directed in the radial direction, in which a silicon monocrystalline rod provided with a homogeneous phosphorus doping is subjected to a zone melting process, for depletion of the dopant in a vacuum and for an enrichment of the dopant in a doping gas atmosphere, the molten zone being annular and having a depth set in accordance with the desired peripheral depletion or enrichment zone to be less than the rod radius.

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