Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

H - Electricity

01

L

356/172, 356/176

H01L 21/28 (2006.01) H01L 21/265 (2006.01) H01L 21/285 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1199430

- 1 - Abstract: In the production of a semiconductor device a silicide layer or silicon alloy layer is formed within a surface region of an impurity-doped region on the surface of a semiconductor substrate by implanting and heating any of those metals that can form silicides or silicon alloys with silicon upon heating. The technique avoids peeling off of a metallic electrode or wiring that can thus be formed directly on the semiconductor substrate.

453795

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