Method of producing semiconductor substrate

Details Method of producing semiconductor substrate Method of producing semiconductor substrate

C - Chemistry, Metallurgy

30

B

C30B 25/20 (2006.01) H01L 21/20 (2006.01) H01L 21/306 (2006.01) H01L 21/31 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2059368

A method of producing a semiconductor substrate, which comprises forming a monocrystalline silicon layer on a porous silicon substrate by epitaxial growth and applying an oxidation treatment to the porous silicon substrate and the monocrystalline silicon layer at least near the interface between the porous silicon substrate and the monocrystalline silicon layer.

Méthode de fabrication d'un substrat semi-conducteur comprenant les étapes suivantes : former une couche monocristalline de silicium sur un substrat de silicium poreux par une croissance épitaxiale; et exécuter un traitement par oxydation sur le substrat de silicium poreux et la couche monocristalline de silicium au moins près de l'interface entre ces deux éléments.

Affiliated with

Also associated with

Rating

Method of producing semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing semiconductor substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1692882