C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/3.4
C30B 23/06 (2006.01) C30B 1/02 (2006.01) C30B 1/08 (2006.01)
Patent
CA 1209017
-1- Abstract of the Disclosure The invention provides a method of forming a single crystal film on the surface of an insulating film. The method involves forming an amorphous or polycrystalline film on the exposed surfaces of a single crystal substrate and an insulating film, in an ultra-high vacuum. The product is then heat treated so that the film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.
420394
Ishihara Hiroshi
Miyao Masanobu
Natsuaki Nobuyoshi
Ohkura Makoto
Tamura Masao
Hitachi Ltd.
Kirby Eades Gale Baker
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