Method of producing single-crystal silicon film

Details Method of producing single-crystal silicon film Method of producing single-crystal silicon film

C - Chemistry, Metallurgy

30

B

356/178, 148/3.7

C30B 1/04 (2006.01) C30B 11/00 (2006.01) C30B 13/34 (2006.01) C30B 29/06 (2006.01)

Patent

CA 1221606

-1- Abstract: A plurality of polycrystalline or amorphous silicon films and a plurality of insulator films are alternately stacked on a semiconductor substrate surface. The insu- lator films are substantially transparent to an irradiating energy beam and each has an opening therein. The plurality of polycrystalline or amorphous silicon films are turned into a single crystal by irradiation with the energy beam. The resulting device has a relatively flat uppermost surface following the irradiation.

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