C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
C04B 35/56 (2006.01) C04B 35/575 (2006.01) C04B 41/00 (2006.01) C04B 41/80 (2006.01) H01L 21/02 (2006.01) H01L 21/265 (2006.01) H05B 3/14 (2006.01)
Patent
CA 2466183
A process by which a silicon carbide sinter jig having an improved purity can be easily produced. The process comprises the steps of: heating a sinter (2) in an argon atmosphere to a heating temperature selected from the range of 2,200 to 2,300~C at a heating rate of 3 to 5 ~C/min; holding it at that heating temperature for 3 hours; and cooling it to 1,000~C at a cooling rate of 2 to 3 ~C/min.
L'invention concerne un procédé permettant de fabriquer de manière simple un support de frittage de carbure de silicium. Le procédé selon l'invention consiste à chauffer une fritte (2) dans une atmosphère d'argon à une température s'échelonnant de 2200 à 2300 ·C à une vitesse de chauffage variant de 3 à 5 ·C/min, à maintenir ladite fritte à cette température durant 3 heures, et à refroidir ladite fritte à 1000 ·C à une vitesse de refroidissement variant de 2 à 3 ·C/min.
Bridgestone Corporation
Gowling Lafleur Henderson Llp
LandOfFree
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