H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/179
H01L 21/265 (2006.01) C30B 13/00 (2006.01) H01L 21/20 (2006.01) H01L 21/324 (2006.01)
Patent
CA 1259426
-14- METHOD OF PRODUCING SOI DEVICES Abstract Disclosed are methods that result in substantial improvement of silicon- on-insulator (SOI) device manufacture. We have discovered that carbon can be advantageously used as a wetting agent in the melting-recrystallization (MR) method of producing SOI wafers. We have also found that contacting the wafer (typically subsequent to the formation thereon of a poly-Si layer on a SiO2 layer but prior to the completion of formation of a SiO2 cap layer on the poly-Si layer) with an atmosphere that comprises a wetting agent containing molecular species (e.g., CH4, NH3), with the wafer at an appropriate elevated (e.g., 500- 900°C) temperature, can reliably result in recrystallized Si films of high quality. Furthermore, we have discovered the existence of a previously unknown parameter regime (low thermal gradient across the resolidification front, typically no more than about 4°C/mm) for the MR process that can result in a highly perfect (?min of 3%, subboundary spacing of about 50 µm, misalignment across subboundaries of the order of 0.1°) resolidified Si layer. Devices can be fabricated directly in this layer, or the layer can be used as seed substrate for the growth of a "thick" epitaxial Si layer of the type useful for the fabrication of high voltage semiconductor devices.
543273
Adams Arthur C.
Pfeiffer Loren N.
West Kenneth W.
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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