H - Electricity – 01 – C
Patent
H - Electricity
01
C
31/114
H01C 17/12 (2006.01) C23C 14/08 (2006.01) H01C 7/04 (2006.01) H01C 7/108 (2006.01)
Patent
CA 1021556
Eastwood H. Keith
Noval Barry A.
Multi-State Devices Ltd.
LandOfFree
Method of producing thin film devices of doped vanadium... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing thin film devices of doped vanadium..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing thin film devices of doped vanadium... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-282107