H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178
H01L 21/302 (2006.01) H01L 21/205 (2006.01) H01L 21/22 (2006.01) H01L 21/461 (2006.01)
Patent
CA 1134059
21.2.79 PHN 9108 ABSTRACT: Method of providing an epitaxial layer. A method of providing an epitaxial layer from a gaseous phase on a substrate, in which a susceptor via which the substrate is heated is provided with a layer of the same material as that of which the sub- strate consists, on which layer the substrate is pro- vided, after which an etchant is passed over the sub- strate so that the side of the substrate remote from the susceptor is etched and chemical transport of the said material takes place from the susceptor to the side of the substrate facing the susceptor, and the epitaxial layer is then deposited on the side of the substrate re- mote from the susceptor, characterized in that the passing-over of the etchant is carried out in two steps, between which two steps an epitaxial growth step is in- troduced, and that during the second etching step the material deposited on the side of the substrate remote from the susceptor during the said growth step is re- moved partly and the material obtained by chemical transport on the side of the substrate facing the susceptor reaches a desired thickness.
325479
N.v. Philips Gloeilampenfabrieken
Van Steinburg C.e.
LandOfFree
Method of providing an epitaxial layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of providing an epitaxial layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of providing an epitaxial layer will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-818592