Method of purifying metallurgical-grade silicon

Details Method of purifying metallurgical-grade silicon Method of purifying metallurgical-grade silicon

C - Chemistry, Metallurgy

01

B

23/327

C01B 33/00 (2006.01) C01B 33/037 (2006.01)

Patent

CA 1116832

METHOD OF PURIFYING METALLURGICAL-GRADE SILICON ABSTRACT OF THE DISCLOSURE A method of purifying metallurgical-grade silicon for the production of silicon solar cells is provided, in which metallurgical-grade silicon is dissolved in aluminum and brought into contact with an aluminum sulphide extraction melt. Thereafter, the silicon is crystallized out and separated off by cooling the melt to a minimum temperature of 600°C. The aluminum melt remaining can then be recharged with silicon, heated, brought into contact with the extraction melt, so that additional silicon can be crystallized out.

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