Method of purifying silicon

Details Method of purifying silicon Method of purifying silicon

C - Chemistry, Metallurgy

30

B

23/327, 148/3.7

C30B 35/00 (2006.01) C01B 33/037 (2006.01)

Patent

CA 1076461

ABSTRACT This invention relates to a process for producing crystalline silicon having an iron concentration less than the iron concentration of the mother liquor. Iron contamin- ated silicon is introduced into a mold and the mold walls are maintained at a temperature sufficient to cause silicon crys- talline growth. The mother liquor is agitated to wash the exposed surfaces of the growing silicon crystals and to pre- vent the freezing of the top surface of the mother liquor. A hollow crystalline silicon ingot is formed and both the inner zone centrally of the crystalline ingot and the outer zone ad- jacent to the mold wall are discarded. The remaining central crystalline portion of the ingot has an iron concentration of from about 1/20th to 1/100th of the iron concentration of the mother liquor.

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