C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/34 (2006.01) B08B 3/12 (2006.01) B44C 1/22 (2006.01) C25F 3/00 (2006.01)
Patent
CA 2288987
A target (1) for sputtering is subjected to a surface treatment process and special packaging after target (1) manufacture for improved sputtering performance and process and yield by reducing particulates. The sputtering target (1) is first surface treated to remove oxides, impurities and contaminants. The surface treated target (1) is then covered with a metallic enclosure (5) and optionally, a passivating barrier layer. The metallic enclosure (5) protects the target surface from direct contact with subsequently employed packaging material such as plastic bags (23), thereby eliminating source of organic materials during sputtering operations. The surface treatment of the target (1) removes deformed material, smearing, twins, or burrs and the like from the target surface, reducing "burn-in" or sputter conditioning time prior to production sputtering of thin films.
Cette cible (1) pour pulvérisation est soumise à un traitement de surface et à un emballage spécial après sa fabrication et ce, afin d'améliorer les performances du processus de pulvérisation et le rendement de celle-ci par réduction du matériau particulaire. On traite d'abord la surface de la cible pour pulvérisation (1) pour enlever les oxydes, les impuretés et les agents contaminants. Une fois cette cible (1) traitée en surface, on la recouvre d'une enveloppe métallique (5) et, éventuellement, d'une couche barrière de passivation. L'enveloppe métallique (5) protège la surface de la cible d'un contact direct avec le matériau d'emballage utilisé par la suite, des poches plastiques (23) notamment, ce qui supprime les sources de matières organiques durant les opérations de pulvérisation. Le traitement de surface de la cible (1), qui élimine de la surface de la cible le matériau déformé, les salissures, les macles ou les ébarbures et analogue, réduit le temps de formage ou temps de conditionnement avant la pulvérisation de films minces.
Dunlop John A.
Feldewerth Gerald B.
Goldstein Michael
Schittny Stephan
Shim Cari
Gowling Lafleur Henderson Llp
Intel Corporation
Materials Research Corporation
Praxair St Technology Inc
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