Method of removing electrical shorts and shunts from a...

H - Electricity – 01 – L

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356/177, 345/18

H01L 21/306 (2006.01) H01L 21/28 (2006.01) H01L 21/316 (2006.01) H01L 21/3213 (2006.01) H01L 27/142 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1277753

ABSTRACT OF THE DISCLOSURE A method of removing electrical shorts and shunts from a thin-film semiconductor device having pairs of electrodes with exposed contact surfaces wherein each pair of electrodes is sepa- rated by a semiconductor film. The disclosed method comprises the steps of coating the exposed contact surfaces with an ionic solution and successively applying a reverse-bias voltage between the exposed contact surfaces of each pair of electrodes. The ionic solution has an etching rate that increases with increased temperature so that the leakage current flowing through shorts and shunts located between each respective pair of electrodes in response to the reverse-bias voltage will create a local tempera- ture increase at the shorts and shunts and selectively etch or oxidize the shorts and shunts, rendering them substantially non- conductive. The exposed contact surfaces can be coated using a sponge applicator or spray apparatus. The preferred ionic solu- tion comprises an acid mixture diluted to one part in at least five parts water.

552042

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