G - Physics – 03 – C
Patent
G - Physics
03
C
117/7, 95/95
G03C 11/04 (2006.01) G03F 1/00 (2006.01)
Patent
CA 2001910
A B S T R A C T The invention relates to a technique for retouching a pattern which is formed on one side of a substrate and which partially has defects. A method of retouching the pattern, according to the invention, comprises coating the one side of the substrate including the pattern, with a retouching protective membrane, exposing the one side of the substrate, with reference to portions having defects, filling the portions of the exposed one side of the substrate, with retouching material and removing the retouching protective membrane. One of the retouching protective membrane and the retouching material is made of water- soluble material, while the other is made of oil-soluble material.
Furukawa Tadahiro
Kikuchi Toshiaki
Konno Hitoshi
Kyodo Printing Co. Ltd.
Riches Mckenzie & Herbert Llp
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