Method of selective etching using etch stop layer

Details Method of selective etching using etch stop layer Method of selective etching using etch stop layer

G - Physics

02

B

G02B 26/00 (2006.01) B81B 7/02 (2006.01) G02F 1/01 (2006.01) G02F 1/13 (2006.01)

Patent

CA 2514349

The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a mirror layer. The etch stop may reduce undesirable over-etching of the sacrificial layer and the mirror layer. The etch stop layer may also serve as a barrier layer, buffer layer, and/or template layer.

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