Method of selectively etching aiiibv semiconductor materials

Details Method of selectively etching aiiibv semiconductor materials Method of selectively etching aiiibv semiconductor materials

H - Electricity

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356/177

H01L 21/312 (2006.01) H01L 21/285 (2006.01) H01L 21/306 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1059242

ABSTRACT: The invention relates to a method of manufacturing a semiconductor device in which an etching process is used so as to etch regions consisting of AIIIBV compounds selec- tively relative to each other. According to the invention in the etching process an etching bath is used having a water- dissolved oxidising material and a reducing material con- stituting together a redox system. In such an etching bath with redox system the selectivity is established by the choice of the concentrations of the materials and of the pH. -14-

250662

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