H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/167
H01L 21/52 (2006.01) H01L 21/60 (2006.01)
Patent
CA 2000838
ABSTRACT OF THE DISCLOSURE In order to solder a silicon substrate on a supporting plate, an aluminum thin plate is inserted therebetween as a solder metal layer. An assembly thus obtained is heated to 580°C which is higher than the recrystallization temperature 264°C of the aluminum thin plate but is lower than the eutectic reaction temperature 585°C of the interface between the silicon substrate and the aluminum thin plate. After the assembly is held at 580°C for twenty minutes, the assembly is further heated to 610°C in order to melt the aluminum thin plate into which silicon atoms are diffused. The aluminum thin plate changes uniformly to an eutectic layer consisting of silicon and aluminum, whereby the silicon substrate is soldered on the supporting plate.
Mitsubishi Denki Kabushiki Kaisha
Swabey Ogilvy Renault
LandOfFree
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