Method of the boron doping of silicon bodies

Details Method of the boron doping of silicon bodies Method of the boron doping of silicon bodies

H - Electricity

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L

356/178

H01L 21/223 (2006.01) C30B 31/02 (2006.01) H01L 21/311 (2006.01)

Patent

CA 1125440

Disclosure Number Docket Number GE 877 216 GE 978 008 ABSTRACT Method of doping silicon with boron by means of diffusion, where in a first heating process the silicon is exposed to a gas stream con- taining boron and oxygen in a predetermined quantitative ratio, with a boron glass layer forming on the silicon, and beneath said boron glass layer, in the unmasked areas, an SiB6 layer, where the boron glass, without the silicon being substantially affected, is subsequently removed, and where finally in a second heating process boron is driven into the silicon. The method is suitable for producing silicon areas of low as well as of high boron doping. For making the former, the gas stream contains oxygen during the entire first heating process, and the drive-in is performed in an oxi- dizing atmosphere. For the entire silicon bodies and batches highly homogeneous Rs and xj values are reproducibly obtained. When making the highly doped areas the phase during the first heat- ing process when the boron coating is taking place is very short, and it is only during that phase that the gas stream also contains oxygen. Driving-in takes place in an inert atmosphere, It is important to note that the thus produced boron-doped areas can overlap with highly ar- senic-doped areas without any dislocations being produced in the over- lapping areas.

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