H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/165, 356/178
H01L 21/20 (2006.01) H01L 21/225 (2006.01) H01L 21/285 (2006.01)
Patent
CA 1223976
- 10 - A METHOD OF TRANSFERRING IMPURITIES FROM REGION TO REGION OF A SEMICONDUCTOR DEVICE Abstract The contact to the source-drain region in advanced memory arrays has a width of tune order of the minimum feature size. The source-drain has similar minimum feature dimensions in width to keep the array optimally dense. Thus this contact is made "headless" and requires a "line on line" alignment. Some offset in forming the window is inevitable and that offset exposes the channel stop. The contact then shorts to the substrate. Using a polysilicon transfer layer with an appropriate post anneal the region immediately under the contact and along the window sidewall can be autodoped sufficiently to avoid shorts to the substrate, and provide a continuous electrical path for the deposited contact.
478432
American Telephone And Telegraph Company
Kirby Eades Gale Baker
LandOfFree
Method of transferring impurities from region to region of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of transferring impurities from region to region of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of transferring impurities from region to region of a... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1265858