C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/81
C23C 16/04 (2006.01) C23C 16/44 (2006.01) C23C 16/458 (2006.01)
Patent
CA 2023278
- 1 - ABSTRACT OF THE DISCLOSURE A method of preventing backside growth on substrates in a vapor deposition system wherein the substrate (10) is mounted on a plurality of graphite pillars (16) with the pillars being bonded to the substrate as near theperiphery thereof as possible. A hollow body (14) open on one side but closed on the other, and fabricated from flexible graphite suitably with graphite cement used as a bonding agent, is mounted on the pillars with the open end facing the substrate. The open end of the hollow body is pressed against the substrate and sealed with a bonding agent. This completely covers the backside of the substrate and thus prevents any vapor deposition thereon. Vapor deposition occurs, however, on the outer surface of the hollow graphite body. Since the graphite is quite flexible, the material coated or deposited thereon, for example silicon (Si), is readily broken into small pieces by using a piercing tool and a pair of pliers. Cracks developed in the coated hollow body do not propagate to the substrate because the substrate is perpendicular to the body, and the flexible graphite deforms as stresses develop due to material growth and thermal expansion mismatch.
Goela Jitendra S.
Jaworski Roy D.
Taylor Raymond L.
Cvd Inc.
Gowling Lafleur Henderson Llp
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