Methods and apparatus for antimonide-based backward diode...

Details Methods and apparatus for antimonide-based backward diode... Methods and apparatus for antimonide-based backward diode...

H - Electricity

01

L

H01L 29/88 (2006.01) H01L 21/329 (2006.01)

Patent

CA 2725576

Example methods and apparatus for Antimonide-based backward diode millimeter-wave detectors are disclosed. A disclosed example backward diode includes a cathode layer adjacent to a first side of a non-uniform doping profile, and an Antimonide tunnel barrier layer adjacent to a second side of the spacer layer.

L'invention concerne des procédés et un appareil pour des détecteurs d'ondes millimétriques à diode inversée reposant sur l'utilisation d'antimoniure. Selon l'invention, une diode inversée d'exemple comprend une couche cathode adjacente à un premier côté d'un profil de dopage non uniforme, et une couche barrière d'antimoniure à effet tunnel adjacente à un second côté de la couche d'espacement.

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