C - Chemistry – Metallurgy – 23 – G
Patent
C - Chemistry, Metallurgy
23
G
C23G 1/10 (2006.01) C23G 3/00 (2006.01) H01L 21/306 (2006.01) H01L 21/321 (2006.01) H01L 21/70 (2006.01)
Patent
CA 2306242
A cleaning solution, method, and apparatus for clean-ing semiconductor substrates after chemical mechanical pol-ishing of copper films is described. The present invention in-cludes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP allevi-ate the problems associated with brush loading and surface and subsurface contamination.
L'invention concerne une solution de nettoyage, un procédé et un appareil permettant de nettoyer des substrats semiconducteurs après polissage chimio-mécanique de films en cuivre. La présente invention comprend une solution de nettoyage combinant de l'eau désionisée, un composé organique et un composé fluorure dans un milieu à pH acide, cette solution étant destinée à nettoyer la surface d'un substrat semiconducteur après polissage d'un film en cuivre. Ces procédés de nettoyage de substrats semiconducteurs après polissage chimio-mécanique du cuivre permettent de réduire les problèmes liés au chargement des balais et à la contamination de surface et de sous-surface.
Hymes Diane J.
Krusell Wilbur C.
Zhang Liming
Zhao Yuexing
Lam Research Corporation
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