Methods and apparatus for improving an rf excited reactive...

H - Electricity – 05 – B

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H05B 7/02 (2006.01) H01J 37/32 (2006.01) H05H 1/48 (2006.01)

Patent

CA 1157914

KUYEL, B. 2 METHODS AND APPARATUS FOR IMPROVING AN RF EXCITED REACTIVE GAS PLASMA Abstract of the Disclosure The quality of a plasma etching process is improved by applying a DC potential to one of the energizing electrodes in the reaction chamber. The DC potential withdraws a small current from the plasma which causes the reaction to produce a uniform, controllable self-bias on the workpiece placed on the opposite (or second) electrode.

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