G - Physics – 01 – B
Patent
G - Physics
01
B
G01B 9/02 (2006.01) G01B 11/06 (2006.01) G03F 7/20 (2006.01)
Patent
CA 2341403
A method and apparatus for measuring lateral variations in the thickness or in the refractive index of a transparent film such as photoresist on a substrate such as a semiconductor wafer. The film is illuminated by a beam of light including multiple wavelengths. A signal representing a variation of the intensity of the light reflected from the film at the various wavelengths is decomposed into principal frequencies, and the lateral variations in the thickness or in the refractive index of the film is inferred from these principal frequencies. Lateral thickness variation measurements are used in real time for controlling the application or removal of the film.
L'invention concerne un procédé et un dispositif permettant de mesurer les variations latérales de l'épaisseur ou de l'indice de réfraction d'un film transparent du type résine photosensible sur un substrat (par exemple, plaquette en semiconducteur). On illumine le film au moyen d'un faisceau lumineux à longueurs d'onde multiples. On décompose ensuite en fréquences principales un signal représentant une variation de l'intensité lumineuse réfléchie par le film aux différentes longueurs d'onde. On déduit alors des fréquences principales en question les variations latérales de l'épaisseur ou de l'indice de réfraction du film. Utilisées en temps réel, les mesures des variations latérales d'épaisseur permettent de contrôler l'application ou le retrait d'un film.
Marks & Clerk
Tevet Process Control Technologies Ltd.
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