Methods for cds-based film and zno film deposition

C - Chemistry – Metallurgy – 23 – C

Patent

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Details

204/96.06, 148/2

C23C 14/08 (2006.01) C23C 14/06 (2006.01) C23C 14/34 (2006.01) C30B 25/06 (2006.01) C30B 25/16 (2006.01) H01L 31/0336 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1272107

ABSTRACT OF THE DISCLOSURE The present invention relates to a method for depositing a CdS-based thin film on a substrate. The method consists of depositing the film from mixed sources in a vacuum system. By varying the stoichiometry of the film, the lattice constants are conveniently controlled to values of other semiconductors for the formation a junction electronic device. The present invention also relates to a method for improving the thermal stability of low resistivity ZnO thin film. The processes can be advantageously used to prepare a double-layer transparent film with low electrical resistivity and with good lattice matching to form good quality optoelectronic devices.

545363

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