C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.06, 148/2
C23C 14/08 (2006.01) C23C 14/06 (2006.01) C23C 14/34 (2006.01) C30B 25/06 (2006.01) C30B 25/16 (2006.01) H01L 31/0336 (2006.01) H01L 31/18 (2006.01)
Patent
CA 1272107
ABSTRACT OF THE DISCLOSURE The present invention relates to a method for depositing a CdS-based thin film on a substrate. The method consists of depositing the film from mixed sources in a vacuum system. By varying the stoichiometry of the film, the lattice constants are conveniently controlled to values of other semiconductors for the formation a junction electronic device. The present invention also relates to a method for improving the thermal stability of low resistivity ZnO thin film. The processes can be advantageously used to prepare a double-layer transparent film with low electrical resistivity and with good lattice matching to form good quality optoelectronic devices.
545363
Qiu Cindy Xing
Qui Shu Nong
Shih Ishiang
Qiu Cindy Xing
Qui Shu Nong
Shih Ishiang
LandOfFree
Methods for cds-based film and zno film deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for cds-based film and zno film deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for cds-based film and zno film deposition will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1190518