Methods for fabricating self-aligned bipolar transistors...

Details Methods for fabricating self-aligned bipolar transistors... Methods for fabricating self-aligned bipolar transistors...

H - Electricity

01

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356/172

H01L 21/285 (2006.01) H01L 21/033 (2006.01) H01L 21/225 (2006.01)

Patent

CA 1118534

METHODS FOR FABRICATING SELF-ALIGNED BIPOLAR TRANSISTORS HAVING POLYSILICON BASE CONTACTS WITH POLYSILICON OR METAL EMITTER CONTACTS ABSTRACT A method consisting of a sequence of process steps for fabricating a bipolar transistor having base contacts formed of polysilicon material and an emitter contact formed of polysilicon material or metal. The emitter contact is self-aligned to the base contacts by the use of process steps wherein a single mask aperture is used for defining the base contacts and the emitter. YO977-058

326907

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