Methods for forming a structured metallization on a...

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H01L 21/288 (2006.01) H01L 21/60 (2006.01) H01L 23/485 (2006.01) H01L 23/522 (2006.01)

Patent

CA 2280904

The present invention relates to a method of forming a structured metallization on a semiconductor wafer, wherein a main surface of the wafer has a passivation layer applied thereto, which is structured so as to determine at least one bond pad. Initially, a metal bump is produced on the at least one bond pad. An activated dielectric is then produced on the areas of the passivation layer on which the structured metallization is to be formed. Finally, metal is chemically deposited directly on the activated dielectric and on the metal bump in such a way that the structured metallization formed on the activated dielectric and the metal chemically deposited on the metal bump are electro- conductively joined.

Dans le procédé proposé de formation d'une métallisation structurée (30) sur une tranche de semi-conducteur (20), selon lequel est appliquée sur la surface principale de la tranche (20) une couche de passivation (22) structurée de manière à fixer un plot de connexion (24), une bosse métallique (26) est formée sur au moins un plot de connexion (24). Puis, dans les zones de la couche de passivation (22) où doit être réalisée la métallisation structurée (30), on crée un diélectrique activé (28). Ensuite, du métal est chimiquement précipité sur le diélectrique (28) et la bosse métallique (26), en sorte que la métallisation structurée sur le diélectrique activé et le métal chimiquement précipité sur la bosse métallique sont reliés par électroconduction.

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