Methods for the continuous deposition of semiconductor thin...

Details Methods for the continuous deposition of semiconductor thin... Methods for the continuous deposition of semiconductor thin...

C - Chemistry, Metallurgy

25

D

C25D 11/32 (2006.01) H01L 21/368 (2006.01) H01L 31/032 (2006.01) H01L 31/0352 (2006.01) H01L 31/0392 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2105464

METHODS FOR THE CONTINUOUS DEPOSITION OF SEMICONDUCTOR THIN FILMS ABSTRACT OF THE DISCLOSURE The present invention describes methods for the continuous deposition of semiconductor thin films. A flexi- ble, conducting ribbon is partly immersed in an electrolyte containing ions or complexes of the elements to be deposit- ed. A voltage is applied between the ribbon and an anode, which is also immersed in the same electrolyte. The ribbon is fed so that the semiconductor thin film deposition is achieved in a continuous manner. Methods to achieve the desired compositional depth profile and uniform average elemental composition are described. The present methods may be advantageously used for low cost and large area semiconductor device fabrication.

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