Methods of fabricating etched structures

Details Methods of fabricating etched structures Methods of fabricating etched structures

H - Electricity

01

L

H01L 21/027 (2006.01) G02B 6/12 (2006.01) G02B 6/124 (2006.01) G03F 7/00 (2006.01) H01L 21/308 (2006.01)

Patent

CA 2367064

A method of fabricating an etched structure in a target material (21) comprises: forming a first mask layer (22) on the target material, the first mask layer defining a first predetermined pattern of exposed material; depositing a sacrificial layer (23) over the first mask layer and exposed material; forming a second mask layer (24) on the sacrificial layer, the second mask layer defining a second predetermined pattern of exposed material; and etching the sacrificial and target material to form an etched structure in the target material defined by the combination of the first and second predetermined patterns.

L'invention concerne un procédé relatif à la fabrication d'une structure obtenue par attaque chimique dans un matériau cible (21), selon les étapes suivantes: formation d'une première couche masque (22) sur le matériau, définissant un premier motif préétabli de matériau exposé; dépôt d'une couche sacrificielle (23) sur la première couche et le matériau exposé; formation d'une seconde couche masque (24) sur la couche sacrificielle, définissant un second motif préétabli de matériau exposé; et formation d'une structure obtenue par attaque chimique dans le matériau cible, définie par la combinaison des deux motifs.

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