Methods of fabricating semiconductor devices including...

Details Methods of fabricating semiconductor devices including... Methods of fabricating semiconductor devices including...

H - Electricity

01

L

H01L 21/265 (2006.01) H01L 21/329 (2006.01) H01L 21/335 (2006.01)

Patent

CA 2666519

Methods of fabricating a semiconductor device include forming a first semiconductor layer of a first conductivity type and having a first dopant concentration, and forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer has a second dopant concentration that is less than the first dopant concentration. Ions are implanted into the second semiconductor layer to form an implanted region of the first conductivity type extending through the second semiconductor layer to contact the first semiconductor layer. A first electrode is formed on the implanted region of the second semiconductor layer, and a second electrode is formed on a non-implanted region of the second semiconductor layer. Related devices are also discussed.

L'invention concerne des procédés de fabrication d'un dispositif à semi-conducteur consistant à former une première couche semi-conductrice d'un premier type de conductivité et ayant une première concentration en dopant, et à former une seconde couche semi-conductrice sur la première couche semi-conductrice. La seconde couche semi-conductrice contient une seconde concentration en dopant inférieure à la première concentration en dopant. Des ions sont implantés dans la seconde couche semi-conductrice pour former une région implantée du premier type de conductivité s'étendant sur toute l'épaisseur de la seconde couche semi-conductrice pour venir au contact de la première couche semi-conductrice. Une première électrode est formée sur la région implantée de la seconde couche semi-conductrice et une seconde électrode est formée sur une région non implantée de la seconde couche semi-conductrice. L'invention concerne également des dispositifs associés.

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