Methods of forming power semiconductor devices using...

Details Methods of forming power semiconductor devices using... Methods of forming power semiconductor devices using...

H - Electricity

01

L

H01L 29/24 (2006.01) H01L 21/04 (2006.01) H01L 29/739 (2006.01) H01L 29/78 (2006.01) H01L 29/808 (2006.01) H01L 29/868 (2006.01)

Patent

CA 2542704

Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10kV blocking voltages, using drift layers having thicknesses greater than about 100um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2x1015 cm-3. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.

L'invention porte sur des procédés de formation de dispositifs de puissance haute tension au carbure de silicium à couches de conduction provenant d'une tranche de carbure de silicium de haute pureté au lieu de couches de carbure de silicium obtenues par croissance épitaxiale d'un coût prohibitif. Le procédé permet d'obtenir des dispositifs de puissance à porteurs minoritaires ou à porteurs majoritaires pouvant supporter des tensions de blocage supérieures à 10kV et dont les couches de conduction, d'une épaisseur supérieure à environ 100µm, sont formé par croissance de barreaux et dont la concentration en dopant est inférieure à environ 2x10?15¿ cm?-3¿, de telles concentrations pouvant être obtenues par des techniques de dopage par transmutation neutronique (NTD).

Affiliated with

Also associated with

Rating

Methods of forming power semiconductor devices using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming power semiconductor devices using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming power semiconductor devices using... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1941149