Methods of forming semiconductor devices having self aligned...

Details Methods of forming semiconductor devices having self aligned... Methods of forming semiconductor devices having self aligned...

H - Electricity

01

S

H01S 5/323 (2006.01) H01S 5/223 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2504098

Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact layer has sidewalls and a contact surface opposite the mesa surface and wherein the contact layer extends across substantially an entirety of the mesa surface. A passivation layer can be formed on the mesa sidewalls and on portions of the contact layer sidewalls adjacent the mesa surface, and the passivation layer can expose substantially an entirety of the contact surface of the contact layer.

Pour réaliser un dispositif semi-conducteur, on peut former sur un substrat une structure semi-conductrice comportant des bords de mesa et une surface de mesa opposée au substrat. Une couche de contact peut être formée sur la surface de mesa, laquelle couche de contact présente des bords et une surface de contact opposée à la surface de mesa et s'étend sensiblement sur toute la surface de mesa. Une couche de passivation peut être formée sur les bords de mesa et sur des parties des parois de la couche de contact contre la surface de mesa, cette couche de passivation pouvant laisser exposée sensiblement toute la surface de contact de la couche de contact.

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